Effect of carbonization on the growth of 3C‐SiC on Si (111) by silacyclobutane
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111384
Reference18 articles.
1. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
2. Epitaxial Growth and Characterization of β ‐ SiC Thin Films
3. Epitaxial growth and electric characteristics of cubic SiC on silicon
4. Growth and Characterization of Cubic SiC Single‐Crystal Films on Si
5. Epitaxial growth of β-SiC single crystals by successive two-step CVD
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1. High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition;Journal of the American Ceramic Society;2017-10-23
2. Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes;Applied Physics Letters;2017-02-20
3. Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-09
4. Investigation of Carbon Buildup in Simulations of Multi-Impact Bombardment of Si with 20 keV C60 Projectiles;The Journal of Physical Chemistry A;2014-02-20
5. Antimony-assisted carbonization of Si(111) with solid source molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2013-11
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