Investigation of Carbon Buildup in Simulations of Multi-Impact Bombardment of Si with 20 keV C60 Projectiles-Reference-Cited by-同舟云学术

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Investigation of Carbon Buildup in Simulations of Multi-Impact Bombardment of Si with 20 keV C60 Projectiles

Published:2014-02-20 Issue:37 Volume:118 Page:8081-8087
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Krantzman Kristin D.¹,Briner Clarissa A.¹,Garrison Barbara J.²

Affiliation:

1. Department of Chemistry and Biochemistry, College of Charleston, 66 George Street, Charleston, South Carolina 29424, United States

2. Department of Chemistry, Penn State University, 104 Chemistry Bldg. University Park, Pennsylvania 16802, United States

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp4108624

Reference23 articles.

1. Effect of carbonization on the growth of 3C‐SiC on Si (111) by silacyclobutane

2. 3C-SiC Film Growth on Si Substrates

3. Ion-beam synthesis of 3C-SiC surface layers on silicon

4. Formation of a surface SiC layer by carbon-ion implantation into silicon

5. The development of C60 and gold cluster ion guns for static SIMS analysis

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1. Convenient Way to Create an MD Model of a Hot Crystal with an Open Surface;2022 International Conference on Electrical Engineering and Photonics (EExPolytech);2022-10-20

2. Numerical study of silicon vacancy color centers in silicon carbide by helium ion implantation and subsequent annealing;Nanotechnology;2021-12-24

3. Physical Mechanisms of SiO$_{2}$ Target Sputtering with Accelerated Ions of C$_{60}$;METALLOFIZIKA I NOVEISHIE TEKHNOLOGII;2016-08-17

4. Formation of Neutral InmCn Clusters under C60 Ion Bombardment of Indium;The Journal of Physical Chemistry A;2014-05-15

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