Ultraviolet Photodetectors Using Transparent Gate AlGaN/GaN High Electron Mobility Transistor on Silicon Substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference34 articles.
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1. A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor;ACS Applied Electronic Materials;2024-05-16
2. GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection;IEEE Electron Device Letters;2024-05
3. Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes;Advanced Optical Materials;2024-03-11
4. ITO AlGaN/GaN Ultraviolet Broadband Photodetector With Exceeding Responsivity Beyond the ITO Transmittance Limitation;IEEE Electron Device Letters;2024-03
5. 120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector;Optical Materials;2024-02
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