ITO AlGaN/GaN Ultraviolet Broadband Photodetector With Exceeding Responsivity Beyond the ITO Transmittance Limitation
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, National University of Singapore, Cluny Road, Singapore
Funder
Ministry of Education, Singapore, under T1
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/55/10449685/10379173.pdf?arnumber=10379173
Reference25 articles.
1. Ultrathin Metal films for Transparent Electrodes of Flexible Optoelectronic Devices
2. Electrical, optical, and structural properties of indium–tin–oxide thin films for organic light-emitting devices
3. Indium tin oxide contacts to gallium nitride optoelectronic devices
4. Structural, optical, and electrical properties of E-beam and sputter-deposited ITO films for LED applications
5. InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
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