The influence of temperature on set voltage for different high resistance state in 1T1R devices-Reference-Cited by-同舟云学术

The influence of temperature on set voltage for different high resistance state in 1T1R devices

Published:2019-02-01 Issue:2 Volume:12 Page:024004
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Tan Yung-Fang,Su Yu-Ting,Chen Min-Chen,Chang Ting-Chang,Tsai Tsung-Ming,Tseng Yi-Ting,Yang Chih-Cheng,Zheng Hao-Xuan,Chen Wen-Chung,Lin Chun-Chu,Ma Xiao-Hua,Hao Yue,Sze Simon M

Funder

Ministry of Science and Technology, Taiwan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/aafefa/pdf

Reference30 articles.

1. Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

2. Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors

3. Resistance random access memory

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