Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device-Reference-Cited by-同舟云学术

Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device

Published:2020-04-20 Issue:6 Volume:6 Page:2000066
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Huang Wei‐Chen¹,Zheng Hao‐Xuan¹,Chen Po‐Hsun²³,Chang Ting‐Chang¹⁴^ORCID,Tan Yung‐Fang⁵,Lin Shih‐Kai⁶,Zhang Yong‐Ci⁵,Jin Fu‐Yuan¹,Wu Chung‐Wei¹,Yeh Yu‐Hsuan¹,Chou Sheng‐Yao⁵,Huang Hui‐Chun⁵,Chen Yan‐Wen³,Sze Simon M.⁷

Affiliation:

1. Department of PhysicsNational Sun Yat‐Sen University Kaohsiung 804 Taiwan

2. Department of Applied ScienceR.O.C. Naval Academy Kaohsiung 813 Taiwan

3. Center for Nanoscience and NanotechnologyNational Sun Yat‐Sen University Kaohsiung 804 Taiwan

4. Center of Crystal ResearchNational Sun Yat‐Sen University Kaohsiung 804 Taiwan

5. Department of Materials and Optoelectronic ScienceNational Sun Yat‐Sen University Kaohsiung 804 Taiwan

6. Institute of Electronics EngineeringNational Tsing Hua University Hsinchu 30013 Taiwan

7. Department of Electronics Engineering and Institute of ElectronicsNational Chiao Tung University Hsinchu 30010 Taiwan R. O. C.

Funder

Ministry of Science and Technology, Taiwan

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/aelm.202000066

Reference22 articles.

1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor

2. Current Status of Ferroelectric Random-Access Memory

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5. Emerging memories: resistive switching mechanisms and current status

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