Incorporation of a bipolar incremental step pulse programming with thermal forming to reduce the forming voltage in 1T1R structure resistance random access memory
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ab8861/pdf
Reference41 articles.
1. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
2. Metal–Oxide RRAM
3. Resistance random access memory
4. Resistive switching in transition metal oxides
5. Memristive switching mechanism for metal/oxide/metal nanodevices
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application;physica status solidi (RRL) – Rapid Research Letters;2021-07-26
2. Memristors based on TiO x /HfO x or AlO x /HfO x Multilayers with Gradually Varied Thickness;physica status solidi (RRL) – Rapid Research Letters;2021-03-17
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