Memristors based on TiO x /HfO x or AlO x /HfO x Multilayers with Gradually Varied Thickness-Reference-Cited by-同舟云学术

Memristors based on TiO x /HfO x or AlO x /HfO x Multilayers with Gradually Varied Thickness

Published:2021-03-17 Issue:6 Volume:15 Page:2000607
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Yin Binfeng¹,Wang Yongzhi¹,Xie Guancai²,Guo Beidou²,Gong Jian Ru²^ORCID

Affiliation:

1. College of Mechanical Engineering Yangzhou University Yangzhou 225127 China

2. Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience CAS Key Laboratory for Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202000607

Reference25 articles.

1. In-situ TEM observation of Multilevel Storage Behavior in low power FeRAM device

2. Memristors based on multilayer graphene electrodes for implementing a low-power neuromorphic electronic synapse

3. Robust Ag/ZrO2/WS2/Pt Memristor for Neuromorphic Computing

4. A Low‐Current and Analog Memristor with Ru as Mobile Species

5. Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

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