Expansion and contraction of single Shockley stacking faults in SiC epitaxial layer under ultraviolet irradiation-Reference-Cited by-同舟云学术

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Expansion and contraction of single Shockley stacking faults in SiC epitaxial layer under ultraviolet irradiation

Published:2019-03-19 Issue:4 Volume:12 Page:041006
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Tanaka Takanori,Shiomi Hiromu,Kawabata Naoyuki,Yonezawa Yoshiyuki,Kato Tomohisa,Okumura Hajime

Funder

New Energy and Industrial Technology Development Organization

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://iopscience.iop.org/article/10.7567/1882-0786/ab0a8f/pdf

Reference26 articles.

1. Degradation of hexagonal silicon-carbide-based bipolar devices

2. Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes

3. Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

4. Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes

5. Glide and multiplication of basal plane dislocations during 4H‐SiC homoepitaxy

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation;Applied Physics Express;2024-08-01

2. Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers;Applied Physics Letters;2024-04-08

3. Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation;Applied Physics Express;2023-02-01

4. Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers;Journal of Electronic Materials;2022-10-31

5. Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation;Scientific Reports;2022-08-15

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