Generation of ultra high-power thermal plasma jet and its application to crystallization of amorphous silicon films
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=6S2/a=06HE05/pdf
Reference31 articles.
1. XeCl Excimer Laser Annealing Used to Fabricate Poly-Si TFT's
2. Phase transformation mechanisms involved in excimer laser crystallization of amorphous silicon films
3. Excimer laser-induced temperature field in melting and resolidification of silicon thin films
4. Electrical property of coincidence site lattice grain boundary in location-controlled Si island by excimer-laser crystallization
5. Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing
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1. Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation;Japanese Journal of Applied Physics;2022-02-09
2. Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma;Micromachines;2022-01-24
3. Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide;Technical Physics Letters;2021-12-13
4. Large area annealing by magnetic field scanning of atmospheric pressure thermal plasma beam;Japanese Journal of Applied Physics;2020-04-01
5. In situ monitoring to visualize temperature distribution in molten silicon region formed under atmospheric pressure thermal plasma jet irradiation;Applied Physics Express;2019-12-03
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