Improved channel mobility of 4H-SiC n-MOSFETs by ultrahigh-temperature gate oxidation with low-oxygen partial-pressure cooling
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=12/a=120304/pdf
Reference28 articles.
1. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
2. Material science and device physics in SiC technology for high-voltage power devices
3. Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor
4. N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces
5. Improved Evaluation Method for Channel Mobility in SiC Trench MOSFETs
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1. Development of differential amplifier circuits based on radiation hardened H-diamond MOSFET (RADDFET);Diamond and Related Materials;2023-04
2. Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs;Japanese Journal of Applied Physics;2022-02-01
3. Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation;Applied Physics Express;2021-08-24
4. Defect engineering in SiC technology for high-voltage power devices;Applied Physics Express;2020-11-26
5. Significant reduction of interface trap density of SiC PMOSFETs by post-oxidation H2O annealing processes with different oxygen partial pressures;Japanese Journal of Applied Physics;2020-05-18
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