Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=6S3/a=06KA04/pdf
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1. Status and prospects for SiC power MOSFETs
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