Precise Determination of the Direct–Indirect Band Gap Energy Crossover Composition in AlxGa1-xAs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=7/a=071201/pdf
Reference11 articles.
1. GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
2. Photoluminescence of AlxGa1−xAs alloys
3. Band parameters for III–V compound semiconductors and their alloys
4. Some optical properties of the AlxGa1−xAs alloys system
5. Dependence of the AlxGa1−xAs band edge on alloy composition based on the absolute measurement ofx
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3. Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I–type-II transition of natural band offsets in nonpolar zinc-blendeAlxGa1−xN/AlyGa1−yNcomposites;Physical Review B;2017-04-12
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