Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I–type-II transition of natural band offsets in nonpolar zinc-blendeAlxGa1−xN/AlyGa1−yNcomposites-Reference-Cited by-同舟云学术

Understanding band alignments in semiconductor heterostructures: Composition dependence and type-I–type-II transition of natural band offsets in nonpolar zinc-blendeAlxGa1−xN/AlyGa1−yNcomposites

Published:2017-04-12 Issue:15 Volume:95 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Landmann M.,Rauls E.,Schmidt W. G.

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.95.155310/fulltext

Reference115 articles.

1. The Blue Laser Diode

2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

3. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

4. pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

5. GaN-Based RF Power Devices and Amplifiers

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