The effects of small amounts of oxygen during deposition on structural changes in sputtered HfO2-based films
Author:
Funder
JSPS KAKENHI
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab37cb/pdf
Reference38 articles.
1. Physics of the ferroelectric nonvolatile memory field effect transistor
2. Metal–Ferroelectric–Insulator–Semiconductor Memory FET With Long Retention and High Endurance
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