Effects of shear strain on HZO ferroelectric orthorhombic phases-Reference-Cited by-同舟云学术

Effects of shear strain on HZO ferroelectric orthorhombic phases

Published:2023-09-11 Issue:11 Volume:123 Page:
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:

Author:

Chen Yun-Wen¹^ORCID,Liu C. W.¹²^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, and Department of Electrical Engineering, National Taiwan University 1 , Taiwan, Taipei 10617, Republic of China

2. Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University 2 , Taiwan, Taipei 10617, Republic of China

Abstract

The stabilities of hafnium and zirconium oxide ferroelectric orthorhombic phases, oIII-phase (Pca21) and oIV-phase (Pmn21), under shear strain are investigated theoretically by atomic modeling with density functional theory calculations. The results indicate that oIV-phase serves as a buffer state preventing oIII-phase from transforming into m-phase (P21/c) under structural distortion caused by shear strain and meanwhile preserves the remanent polarization to some certain degree. Shear strain will also induce the reduction in coercive field of the HZO film due to the distortion of oIII-phase or phase transition into oIV-phase. It is very possible to identify oIV-phase with careful analysis of high-resolution transmission electron microscopy and high-angle annular dark-field STEM images at the region having a crystal tilt angle smaller than 86°.

Funder

National Science and Technology Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/5.0159700/18119461/112901_1_5.0159700.pdf

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