Hydrophilic direct bonding of diamond (111) substrate using treatment with H2SO4/H2O2

Author:

Matsumae TakashiORCID,Kurashima Yuichi,Umezawa Hitoshi,Takagi HidekiORCID

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Surface-activated direct bonding of diamond (100) and c-plane sapphire with high transparency for quantum applications;Japanese Journal of Applied Physics;2023-09-01

2. 半導体デバイス基板と高熱伝導率材料の直接接合技術について;Journal of The Japan Institute of Electronics Packaging;2023-08-01

3. Simple Low-Temperature GaN/Diamond Bonding Process with an Atomically Thin Intermediate Layer;ACS Applied Nano Materials;2023-07-25

4. 3D Integration for Modular Quantum Computer based on Diamond Spin Qubits;2023 IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM);2023-05

5. Optimizing activation process for strong direct bonding between diamond and Si substrates;2023 International Conference on Electronics Packaging (ICEP);2023-04-19

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