Precise determination of polarization fields in c-plane GaN/Al x Ga1-x N/GaN heterostructures with capacitance–voltage-measurements-Reference-Cited by-同舟云学术

Precise determination of polarization fields in c-plane GaN/Al x Ga1-x N/GaN heterostructures with capacitance–voltage-measurements

Published:2019-04-23 Issue:SC Volume:58 Page:SCCB08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Susilo Norman,Schilling Marcel,Narodovitch Michael,Yao Hsin-Hung,Li Xiaohang,Witzigmann Bernd,Enslin Johannes,Guttmann Martin,Roumeliotis Georgios G.,Rychetsky Monir,Koslow Ingrid,Wernicke Tim,Niermann Tore,Lehmann Michael,Kneissl Michael

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab09dd/pdf

Reference42 articles.

1. Development of 230-270 nm AlGaN-based deep-UV LEDs

2. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

3. Growth and applications of Group III-nitrides

4. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

5. III-Nitride Ultraviolet Emitters

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