Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes-Reference-Cited by-同舟云学术

Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes

Published:2020-10-12 Issue:15 Volume:117 Page:152104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Ziyi¹²^ORCID,Kushimoto Maki³^ORCID,Horita Masahiro²³^ORCID,Sugiyama Naoharu²,Schowalter Leo J.⁴^ORCID,Sasaoka Chiaki²,Amano Hiroshi²

Affiliation:

1. Innovative Devices R&D Center, Corporate Research and Development, Asahi Kasei Corporation, Fuji, Shizuoka 416-8501, Japan

2. Center for Integrated Research of Future Electronics, Institute of Materials Research and System for Sustainability, Nagoya University, Chikusa, Aichi 464-8601, Japan

3. Graduate School of Engineering, Nagoya University, Chikusa, Aichi 464-8603, Japan

4. Crystal IS, 70 Cohoes Avenue, Green Island, New York 12183, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0027789

Reference31 articles.

1. Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys

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3. Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

4. High p-type conduction in high-Al content Mg-doped AlGaN

5. Charge carrier transport properties of Mg-doped Al0.6Ga0.4N grown by molecular beam epitaxy

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