Longitudinal mode seeding in modulated InGaN laser diodes

Abstract

Abstract The modulation of InGaN laser diodes is important for applications such as laser projection in cinemas as well as in virtual and augmented reality applications. Here, a modulation frequency in the 100 MHz to 1 GHz range is necessary. On this timescale, pixel crosstalk is a major issue that affects the intensity and spectral properties. We investigate the spectral and temporal dynamics of InGaN laser diodes driven with different pulse patterns. We identify longitudinal mode seeding as a mechanism between interacting pulses which are spaced by several nanoseconds: photons, remaining in the cavity after the trailing edge of the electric pulse, “seed” consequent pulses and promoting their own longitudinal mode. This leads to a changed spectral–temporal mode pattern of the consequent pulse. The long cavity ring-down time of these photons is a consequence of relatively low losses. Further investigations were performed by streak camera measurements of differently biased laser diodes. For a bias below, but close to, the threshold, the optical gain nearly compensates internal and mirror losses. Additional simulations are performed to confirm the experimental results.