Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor-Reference-Cited by-同舟云学术

Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor

Published:2018-11-19 Issue:1 Volume:58 Page:016503
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Wang Wensheng,Nomura Kenji,Nakamura Ko,Eshita Takashi,Ozawa Soichiro,Yamaguchi Hideshi,Takai Kazuaki,Watanabe Junichi,Mihara Satoru,Hikosaka Yukinobu,Saito Hitoshi,Kataoka Yuji,Kojima Manabu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=1/a=016503/pdf

Reference34 articles.

1. How Can Edge Computing Benefit From Software-Defined Networking: A Survey, Use Cases, and Future Directions

2. Development of highly reliable ferroelectric random access memory and its Internet of Things applications

3. Developments in 3D-NAND Flash technology

4. Overview of emerging nonvolatile memory technologies

5. 7.5 A 3.3ns-access-time 71.2μW/MHz 1Mb embedded STT-MRAM using physically eliminated read-disturb scheme and normally-off memory architecture

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