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Developments in 3D-NAND Flash technology

  • Published:2014 Issue: Volume: Page:27-74
  • ISSN:
  • Container-title:Advances in Non-volatile Memory and Storage Technology
  • language:
  • Short-container-title:

Author:

Shirota R.

Publisher

Elsevier

Reference35 articles.

1. New ultra high density EPROM and Flash EEPROM with NAND structured cell;Masuoka,1987

2. Non-volatile semiconductor memory and its memory system;Shirota,1987

3. A NAND structured cell with a new programming technology for high reliable 5V-only Flash EEPROM;Kirisawa,1990

4. Random telegraph noise of deep-submicrometer MOSFETs;Hung;IEEE Electron Device Lett.,1990

5. The impact of random telegraph signals on the scaling of multilevel Flash memories;Kurata,2006

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective Wet Etching Technology in 3D NAND Flash Manufacturing;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

2. Controlling the beam angle spread of carbon implantation for improvement of bin map defect in V-NAND flash memory;Memories - Materials, Devices, Circuits and Systems;2023-07

3. Redeposition mechanism on silicon oxide layers during selective etching process in 3D NAND manufacture;Journal of Industrial and Engineering Chemistry;2023-03

4. Optimal Program-Read Schemes Towards Highly Reliable Open Block Operations in 3D Charge-trap NAND Flash Memory;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2021

5. Random Telegraph Noise in Flash Memories;Noise in Nanoscale Semiconductor Devices;2020
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