High mobility (>30 cm2 V−1 s−1) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μm−1 off-state leakage current-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

High mobility (>30 cm2 V−1 s−1) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A μm−1 off-state leakage current

Published:2019-03-14 Issue:SB Volume:58 Page:SBBJ07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Saito Nobuyoshi,Sawabe Tomoaki,Kataoka Junji,Ueda Tomomasa,Tezuka Tsutomu,Ikeda Keiji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SB/a=SBBJ07/pdf

Reference33 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An All-Region BSIM Thin-Film Transistor Model for Display and BEOL 3-D Integration Applications;IEEE Transactions on Electron Devices;2024-08

2. Oxide and 2D TMD semiconductors for 3D DRAM cell transistors;Nanoscale Horizons;2024

3. A 3-D Bank Memory System for Low-Power Neural Network Processing Achieved by Instant Context Switching and Extended Power Gating Time;IEEE Journal of the Electron Devices Society;2024

4. Lifetime estimation of thin-film transistors in organic emitting diode display panels with compensation;Scientific Reports;2023-10-16

5. Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations;Materials;2023-03-12

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP