Formation of m-plane AlN on plasma-nitrided m-plane sapphire
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab0ad3/pdf
Reference29 articles.
1. Epitaxial Growth of AlN Film with an Initial-Nitriding Layer on α -Al2O3Substrate
2. Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth of InN on Si and α-Al2O3 substrates
3. Nitridation process of sapphire substrate surface and its effect on the growth of GaN
4. Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation
5. Structural investigation of sapphire surface after nitridation
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