Formation of Thin Germanium Dioxide Film with a High-Quality Interface Using a Direct Neutral Beam Oxidation Process
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference30 articles.
1. Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces
2. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics
3. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
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