Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

Published:2011-03-01 Issue:3R Volume:50 Page:031003
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Ji-Ho,Wakahara Akihiro,Okada Hiroshi,Sekiguchi Hiroto,Tiwari Ajay,Kim Yong-Tae,Song Jonghan,Lee Jong-Han,Jhin Junggeun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference28 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. ZnSe-based white LEDs

3. Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer

4. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

5. Radiative and Multiphonon Relaxation of Rare-Earth Ions inY2O3

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of single optical site of Eu and Mg codoped GaN grown by NH3-source molecular beam epitaxy;Journal of Applied Physics;2019-05-07

2. Self-Organized Eu-Doped GaN Nanocolumn Light-Emitting Diode Grown by RF-Molecular-Beam Epitaxy;physica status solidi (a);2018-10-18

3. Optical sites in Eu- and Mg-codoped GaN grown by NH3-source molecular beam epitaxy;Applied Physics Letters;2016-10-10

4. Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN;Journal of Luminescence;2015-10

5. Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE;Journal of Luminescence;2012-12

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