Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer-Reference-Cited by-同舟云学术

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Emission Properties of InGaAlP Visible Light-Emitting Diodes Employing a Multiquantum-Well Active Layer

Published:1994-10-15 Issue:Part 1, No. 10 Volume:33 Page:5784-5787
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sugawara Hideto,Itaya Kazuhiko,Hatakoshi Gen-ichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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