Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN-Reference-Cited by-同舟云学术

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Eu3+ luminescence properties of Eu- and Mg-codoped AlGaN

Published:2015-10 Issue: Volume:166 Page:60-66
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Kanemoto Masayoshi,Sekiguchi Hiroto,Yamane Keisuke,Okada Hiroshi,Wakahara Akihiro

Funder

Ministry of Education, Culture, Sports, Science and Technology

Toyoaki Scholarship Foundation

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference28 articles.

1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

2. Impact of AlGaN on luminescence capability of rare-earth ions in AlGaN

3. Selectively excited photoluminescence from Eu-implanted GaN

4. Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantification of neomycin in rubella vaccine by off/on metal ion mediated photoluminescence from functionalized graphene quantum dots;Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy;2019-09

2. Blue emission of Co2+ in K2ZnP2O7 phosphors;Inorganic Chemistry Communications;2018-11

3. Self-Organized Eu-Doped GaN Nanocolumn Light-Emitting Diode Grown by RF-Molecular-Beam Epitaxy;physica status solidi (a);2018-10-18

4. Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites;ACS Applied Nano Materials;2018-07-17

5. Characteristics of thulium doped gallium oxide films grown by pulsed laser deposition;Thin Solid Films;2017-10

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