Optical sites in Eu- and Mg-codoped GaN grown by NH3-source molecular beam epitaxy-Reference-Cited by-同舟云学术

Optical sites in Eu- and Mg-codoped GaN grown by NH3-source molecular beam epitaxy

Published:2016-10-10 Issue:15 Volume:109 Page:151106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sekiguchi Hiroto¹,Sakai Masaru²,Kamada Takuho¹,Tateishi Hiroki¹,Syouji Atsushi²,Wakahara Akihiro¹

Affiliation:

1. Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan

2. Department of Research, Interdisciplinary Graduate School of Medicine and Engineering, Division of Engineering, Electromechanical and Information System Engineering, University of Yamanashi, Kofu, Yamanashi 400-8510, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4964519

Reference29 articles.

1. Epitaxial growth of Eu-doped GaN by gas source molecular beam epitaxy

2. Excitation-Wavelength Dependent and Time-Resolved Photoluminescence Studies of Europium Doped GaN Grown by Interrupted Growth Epitaxy (IGE)

3. Effect of growth conditions on Eu3+ luminescence in GaN

4. Eu-Doped GaN Films Grown by Phase Shift Epitaxy

5. Effect of Growth Mode on Eu-Incorporation and Luminescence of Eu-Doped GaN Epitaxial Film Grown by Plasma-Assisted Molecular Beam Epitaxy

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