Optical Absorption Properties of BaSi2Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference15 articles.
1. Photoresponse Properties of Polycrystalline BaSi2Films Grown on SiO2Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
2. Photoresponse Properties of Semiconducting BaSi2Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy
3. Fabrication of n+-BaSi2/p+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
4. Energetics of alkaline-earth metal silicides calculated using a first-principle pseudopotential method
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2. Improved conversion efficiency of p-type BaSi2/n-type crystalline Si heterojunction solar cells by a low growth rate deposition of BaSi2;AIP Advances;2022-04-01
3. Recent Progress Toward Realization of High‐Efficiency BaSi 2 Solar Cells: Thin‐Film Deposition Techniques and Passivation of Defects;physica status solidi (a);2021-11-07
4. Toward BaSi 2 /Si Heterojunction Thin‐Film Solar Cells: Insights into Heterointerface Investigation, Barium Depletion, and Silicide‐Mediated Silicon Crystallization;Advanced Materials Interfaces;2020-08-06
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