Point defects in BaSi2 thin films for photovoltaic applications studied by positron annihilation spectroscopy

Author:

Montes A.123ORCID,Eijt S. W. H.4ORCID,Tian Y.1ORCID,Gram R.4ORCID,Schut H.4,Suemasu T.5ORCID,Usami N.6ORCID,Zeman M.1ORCID,Serra J.23ORCID,Isabella O.1ORCID

Affiliation:

1. Photovoltaic Materials and Devices Group, Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology, Delft NL-2628 CD, The Netherlands

2. Faculty of Sciences of University of Lisbon, Lisbon 1749-016, Portugal

3. Instituto Dom Luis, University of Lisbon, Lisbon 1749-016, Portugal

4. Department of Radiation Science and Technology, Faculty of Applied Sciences, Delft University of Technology, Delft NL-2629 JB, The Netherlands

5. Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8573, Japan

6. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

Funder

MIT Portugal Programme

Fondacao para Sciencia e a Tecnologia

China Scholarship Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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