Determination of Bulk Minority-Carrier Lifetime in BaSi2Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing-Reference-Cited by-同舟云学术

Determination of Bulk Minority-Carrier Lifetime in BaSi2Earth-Abundant Absorber Films by Utilizing a Drastic Enhancement of Carrier Lifetime by Post-Growth Annealing

Published:2013-11-01 Issue:11 Volume:6 Page:112302
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Hara Kosuke O.,Usami Noritaka,Nakamura Kotaro,Takabe Ryouta,Baba Masakazu,Toko Kaoru,Suemasu Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=11/a=112302/pdf

Reference23 articles.

1. Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy

2. Optical Absorption Properties of BaSi2Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy

3. Epitaxial Growth of Semiconducting BaSi2Films on Si(111) Substrates by Molecular Beam Epitaxy

4. Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates

5. In-situ heavily p-type doping of over 1020 cm−3 in semiconducting BaSi2 thin films for solar cells applications

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