Photoresponse Properties of Semiconducting BaSi2Epitaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/2/i=2/a=021101/pdf
Reference20 articles.
1. Crystal Structure of Barium Disilicide at High Pressures
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3. Optical Absorption Edge of Ternary Semiconducting Silicide Ba1-xSrxSi2
4. Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1−xSrxSi2 for photovoltaic application
5. Isostructural BaSi2, BaGe2 and SrGe2: electronic and optical properties
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