Investigating Defect-Assisted Emission in BaSi<sub>2</sub> by Power Dependent Photoluminescence-Reference-Cited by-同舟云学术

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Investigating Defect-Assisted Emission in BaSi₂ by Power Dependent Photoluminescence

Published:2022-08-15 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Semiconductor Electronics (ICSE)
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Author:

Mohmad Abdul Rahman¹,Xu Zhihao²,Yamashita Yudai²,Suemasu Takashi³

Affiliation:

1. Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia,Bangi,UKM,Malaysia,43600

2. Graduate School of Pure and Applied Sciences, University of Tsukuba,Ibaraki,Japan

3. University of Tsukuba,Faculty of Pure and Applied Sciences,Department of Applied Physics,Ibaraki,Japan,305-8573

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9862946/9862950/09863086.pdf?arnumber=9863086

Reference19 articles.

1. Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films

2. Photoluminescence investigation of high quality GaAs1−xBix on GaAs

3. Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center

4. Effects of rapid thermal annealing on GaAs1-xBix alloys

5. Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation

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