Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films
Author:
Affiliation:
1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Funder
MEXT | Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
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