Modelling of high‐power IGBT module short‐circuit operation and current distribution by a behavioural model
Author:
Affiliation:
1. School of Energy SystemsLappeenranta University of TechnologyP.O. Box 2053850LappeenrantaFinland
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2016.0152
Reference34 articles.
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2. Physics‐based SPICE‐model for IGBTs with transparent emitter;Cotorogea M.;IEEE Trans. Power Electron.,2009
3. Reverse conducting–IGBTs initial snapback phenomenon and its analytical modelling
4. Comprehensive physically based modelling and simulation of power diodes with parameter extraction using MATLAB
5. Physics‐based insulated‐gate bipolar transistor model with input capacitance correction
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