IPM Modeling Approach for Dynamic Simulation
Author:
Affiliation:
1. School of Physics and Electronics Shandong Normal University,Jinan,China
2. Guangdong HIIC Semiconductor Co., LTD.,Foshan,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10070113/10069879/10069886.pdf?arnumber=10069886
Reference9 articles.
1. 600V 30A SiC IPM with Low Power Loss for Motor Drive Applications
2. Switching Loss Analysis of SiC-MOSFET based on Stray Inductance Scaling
3. Dynamic characteristic evaluation of a 600V reverse blocking IGBT device
4. Modelling of high‐power IGBT module short‐circuit operation and current distribution by a behavioural model
5. Experimental study of parasitic inductance influence on SiC MOSFET switching performance in Matrix converter
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