Physics‐based insulated‐gate bipolar transistor model with input capacitance correction

Author:

Yang Xin1,Otsuki Masahito2,Palmer Patrick R.1

Affiliation:

1. Department of EngineeringUniversity of CambridgeCB2 1PZUK

2. Fuji Electric Co., Ltd.4‐18‐1 Tsukama, MastumotoNagano390‐0821Japan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference22 articles.

1. 2011 Proc. EPE S. Tominaga H. Urushibata H. Fujita Modeling of IGBTs with focus on voltage dependency of terminal capacitances 1 9

2. The second electronic revolution (it's all about control);Ericsen T.;IEEE Trans. Ind. Appl.,2010

3. 2013 Proc. IEEE ISIE X. Yang X. Zhang P.R. Palmer IGBT converters conducted EMI analysis by controlled multiple‐slope switching waveform approximation 1 6

4. 2013 Proc. IEEE IECON X. Yang X. Zhang J. Zhang P.R. Palmer Predictive optimisation of high‐power IGBT switching under active voltage control 1169 1174

5. 2013 Proc. of 15th European Conf. on Power Electronics and Applications X. Yang P.R. Palmer Optimised IGBT turn‐off under active voltage control in PEBB applications 1 10

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