Modelling and solving of IGBT's transient analysis model based on the finite state machine-Reference-Cited by-同舟云学术

Modelling and solving of IGBT's transient analysis model based on the finite state machine

Published:2021-07-09 Issue:11 Volume:14 Page:1973-1984
ISSN:1755-4535
Container-title:IET Power Electronics
language:en
Short-container-title:IET power electron.

Author:

Hao Bin¹^ORCID,Wu Yingzhe²^ORCID,Peng Cheng¹,Tang Xinling³,Zhao Zhibin¹

Affiliation:

1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University) Binjing 102209 China

2. The School of Automation Engineering University of Electronic Science and Technology of China Chengdu 611731 China

3. State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Co., Ltd. Beijing 102209 China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12163

Reference24 articles.

1. Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

2. Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules

3. Impact of snubber parameters on voltage sharing in series-connected insulated gate bipolar transistors

4. Modular Directed Series Multilevel Converter for HVDC Applications

5. Model parameter calibration method of SiC power MOSFETs behavioural model

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