GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels-Reference-Cited by-同舟云学术

GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels

Published:2018-02-23 Issue:4 Volume:11 Page:689-694
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Nakajima Akira¹,Kubota Shunsuke²,Tsutsui Kazuo²,Kakushima Kuniyuki²,Wakabayashi Hitoshi²,Iwai Hiroshi³,Nishizawa Shin‐ichi⁴,Ohashi Hiromichi²

Affiliation:

1. Advanced Power Electronics Research CenterNational Institute of Advanced Industrial Science and TechnologyTsukubaIbarakiJapan

2. Department of Electronics and Applied PhysicsTokyo Institute of TechnologyYokohamaKanagawaJapan

3. Frontier Research CenterTokyo Institute of TechnologyYokohamaKanagawaJapan

4. Research Institute for Applied MechanicsKyushu UniversityKasuga, FukuokaJapan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2017.0376

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4. Single‐chip boost converter using monolithically integrated AlGaN/GaN lateral field‐effect rectifier and normally Off HEMT;Chen W.;IEEE Electron Device Lett.,2009

5. 2009 IEDM Technical Digest Baltimore USA Y. Uemoto T. Morita A. Ikoshi GaN monolithic inverter IC using normally‐off gate injection transistors with planar isolation on Si substrate 7.6.1 7.6.4

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