Author:
Li Yangfeng,Dong Zian,Chen Shuai,Wang Qin,Li Tong,Chen Shulin,Zheng Kun,Zhang Jie,Ding Guojian,Wang Yang,Jia Haiqiang,Yang Rong,Liao Lei
Publisher
Springer Science and Business Media LLC
Reference5 articles.
1. Nakajima A, Kubota S, Tsutsui K, et al. GaN-based complementary metal-oxide-semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation-induced holes and electron channels. IET Power Electron, 2018, 11: 689–694
2. Bader S J, Chaudhuri R, Nomoto K, et al. Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas. IEEE Electron Device Lett, 2018, 39: 1848–1851
3. Chen J, Liu Z, Wang H, et al. A GaN complementary FET inverter with excellent noise margins monolithically integrated with power gate-injection HEMTs. IEEE Trans Electron Devices, 2022, 69: 51–56
4. Zheng Z, Song W, Zhang L, et al. High ION and ION/IOFF ratio enhancement-mode buried p-channel GaN MOSFETs on p-GaN gate power HEMT platform. IEEE Electron Device Lett, 2020, 41: 26–29
5. Chowdhury N, Xie Q, Niroula J, et al. Field-induced acceptor ionization in enhancement-mode GaN p-MOSFETs. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, 2020