Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20030944?crawler=true&mimetype=application/pdf
Reference12 articles.
1. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
2. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
3. Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain
4. Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
5. Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers
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