Performance of quantum-dot-based tunnel-injection lasers: A theoretical analysis
Author:
Affiliation:
1. Institute for Theoretical Physics, University of Bremen, 28359 Bremen, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5045860
Reference18 articles.
1. Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature
2. Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers
3. Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers
4. High Performance InAs/${\rm In}_{0.53}{\rm Ga}_{0.23}{\rm Al}_{0.24}{\rm As}$/InP Quantum Dot 1.55 $\mu{\rm m}$ Tunnel Injection Laser
5. High-Power Tunnel-Injection 1060-nm InGaAs–(Al)GaAs Quantum-Dot Lasers
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1. On the relation between electrical and electro-optical properties of tunnelling injection quantum dot lasers;Nanophotonics;2023-01-31
2. Carrier dynamics in quantum-dot tunnel-injection structures: Microscopic theory and experiment;Applied Physics Letters;2022-09-05
3. Steering coherence in quantum dots by carriers injection via tunneling;Nanophotonics;2022-06-21
4. On the principle operation of tunneling injection quantum dot lasers;Progress in Quantum Electronics;2021-09
5. Resonant and Nonresonant Tunneling Injection Processes in Quantum Dot Optical Gain Media;ACS Photonics;2020-02-27
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