Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1478129
Reference18 articles.
1. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
2. Low-threshold quantum dot lasers with 201 nm tuning range
3. Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers
4. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers
5. In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties
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