On the nature of the linewidth enhancement factor in p-doped quantum dash based lasers
Author:
Affiliation:
1. 3-5 Lab, route de Nozay, 91460 Marcoussis, France
2. LPN-CNRS, route de Nozay, 91460 Marcoussis, France
Funder
Agence Nationale de la Recherche (L' Agence Nationale de la Recherche)
Seventh Framework Programme (EC Seventh Framework Programme)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4904831
Reference17 articles.
1. Theory of the linewidth of semiconductor lasers
2. Observations of near-zero linewidth enhancement factor in a quantum-well coupled quantum-dot laser
3. Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers
4. Theoretical and Experimental Study of Optical Gain, Refractive Index Change, and Linewidth Enhancement Factor of p-Doped Quantum-Dot Lasers
5. DC and Dynamic Characteristics of P-Doped and Tunnel Injection 1.65-$\mu{\hbox {m}}$ InAs Quantum-Dash Lasers Grown on InP (001)
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3. Effect of temperature and ridge-width on the lasing characteristics of InAs/InP quantum-dash lasers: A thermal analysis view;Optics & Laser Technology;2018-01
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