Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes-Reference-Cited by-同舟云学术

Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes

Published:2017-12-08 Issue:3 Volume:5 Page:1084-1093
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Li Qizhu¹²,Wang Xu¹,Zhang Ziyang¹,Chen Hongmei¹,Huang Yuanqing¹,Hou Chuncai¹,Wang Jie¹,Zhang Ruiying¹,Ning Jiqiang³,Min Jiahua²,Zheng Changcheng⁴

Affiliation:

1. Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China

2. School of Materials Science and Engineering, Shanghai University, Shanghai 200444, People’s Republic of China

3. Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, People’s Republic of China

4. Mathematics and Physics Centre, Department of Mathematical Sciences, Xi’an Jiaotong-Liverpool University, Suzhou 215123, People’s Republic of China

Funder

Ministry of Science and Technology of the People's Republic of China

Jiangsu University

National Natural Science Foundation of China

Chinese Academy of Sciences

Central People's Government of the People's Republic of China

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.7b01355