Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars-Reference-Cited by-同舟云学术

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Carrier‐storage‐enhanced superjunction IGBT with n‐Si and p‐3C‐SiC pillars

Published:2019-12 Issue:25 Volume:55 Page:1353-1355
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Li Rui¹^ORCID,Huang Mingmin¹^ORCID,Yang Zhimei¹,Ma Yao¹,Gong Min¹

Affiliation:

1. College of Physics, Sichuan UniversityChengdu610065People's Republic of China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.2803

Reference10 articles.

1. IGBT history, state‐of‐the‐art, and future prospects;Iwamuro N.;Trans. Electron Device,2017

2. The super junction bipolar transistor: a new silicon power device concept for ultra low loss switching applications at medium to high voltages;Bauer F.D.;Solid‐State Electron.,2004

3. An ultralow loss superjunction reverse blocking insulated‐gate bipolar transistor with shorted‐collector trench;Zhou K.;Electron Device Lett.,2016

4. The superjunction insulated gate bipolar transistor optimization and modeling;Antoniou M.;Trans. Electron Device,2010

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1. Impact of JFET width on conduction characteristic for p-channel SiC IGBT;Solid-State Electronics;2024-06

2. Impact of Jfet Width on Conduction Characteristics for P-Channel Sic Igbt;2023

3. A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars;Crystals;2022-06-28

4. Effect of N and Al Doping on 3C-SiC Stacking Faults;Materials Science Forum;2022-05-31

5. Semi-superjunction IGBT with a relatively high-resistance p-top region for low on-state and turn-off losses;Superlattices and Microstructures;2021-10

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