High speed, low leakage current InP∕In0.53Ga0.47As∕InP metamorphic double heterojunction bipolar transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020871?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax = 425 GHz
2. Ultra high f/sub max/ InP/InGaAs/InP transferred substrate DHBTs
3. Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
4. High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates
5. Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs;IEEE Transactions on Electron Devices;2006-11
2. A comparative study of metamorphic InP/InGaAs double heterojunction bipolar transistors with InP and InAIP buffer layers grown by molecular beam epitaxy;Journal of Electronic Materials;2006-02
3. A comparative study of metamorphic InP/InGaAs heterojunction bipolar transistors (MHBTs) grown by gas and solid source molecular beam epitaxy (MBE);Journal of Crystal Growth;2004-08
4. High Bandwidth and Low-Leakage Current InP–<tex>$hbox In_0.53hbox Ga_0.47hbox As$</tex>–InP DBHTs on GaAs Substrates;IEEE Electron Device Letters;2004-04
5. Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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