1. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V
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4. Metamorphic InP/InGaAs heterojunction bipolar transistors on GaAs substrate: DC and microwave performances
5. High speed, low leakage current InP∕In0.53Ga0.47As∕InP metamorphic double heterojunction bipolar transistors