High Bandwidth and Low-Leakage Current InP–<tex>$hbox In_0.53hbox Ga_0.47hbox As$</tex>–InP DBHTs on GaAs Substrates
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Published:2004-04
Issue:4
Volume:25
Page:170-172
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ISSN:0741-3106
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Container-title:IEEE Electron Device Letters
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language:en
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Short-container-title:IEEE Electron Device Lett.
Author:
Kim Y.M.,Griffith Z.,Rodwell M.J.W.,Gossard A.C.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials